Testing Methodology

Like the other memory reviews we have done in the past, we will only concentrate on testing the overclockability of the modules since there are no reliable memory benchmarks.

We tested the modules at the rated timings of 2.5-4-4-8 as well as additional timings of 2-2-2-5 and 3-4-4-8 covering all CAS Latency options in the BIOS.

For those who are not familiar with memory timings, the first number refers to the CAS Latency, the second number to the RAS-to-CAS Delay (tRCD), the third to the Row Precharge Delay (tRP), and the final number refers to the Row Active Delay (tRAS).

For more information on these timings, please consult our BIOS Optimization Guide.

We also tested the memory modules at the rated voltage of 2.7V (measured voltage at 2.73V) as well as an increased voltage of 2.85V (measured voltage at 2.88V).

To check stability at overclocked speeds, we tested the memory modules with Memtest86+ v1.50.

Test Bed

Test Results

CAS 2.0

Although Corsair PC4400 has an official timing of 2.5-4-4-8, these Samsung TCCD chips are more than capable of running at ultra tight latency, so let's see how they fare.

It's not surprising to see how it performed. At tight latency settings, the modules are capable of hitting 210MHz without much trouble. The 10MHz or 5% increased from the official speed of 200MHz is not really earth-shattering, but it nice to see that these modules are capable of running at 410MHz at these timings.

History has shown that Samsung modules do not scale at all with increased memory voltage, so despite a rather huge voltage bump, they still remained stuck at 210MHz. Let's see how they do at CAS 2.5!