Testing Methodology

We only concentrated on testing the overclockability of the modules since there are no reliable memory benchmarks.

Tests included running the modules at the rated timings of 2.5-4-4-10, as well as additional timings of 2-2-2-5 and 3-4-4-8 to cover all CAS Latency options in the BIOS.

For those who are not familiar with memory timings, the first number refers to the CAS Latency, the second number to the RAS-to-CAS Delay (tRCD), the third to the Row Precharge Delay (tRP), and the final number refers to the Row Active Delay (tRAS). For more information on these timings, please consult our BIOS Optimization Guide.

We also tested the memory modules at the rated voltage of 2.8V, as well as an increased voltage of 3.0V. To check stability at overclocked speeds, we tested the memory modules with Memtest86+ v1.50, running for about 2 hours in each test, which is approximately 5 passes in total.

The lowest default voltage of these modules is 2.8V, thus we made it our starting point. We increased the voltage by 0.2V for the overvolted test to show how it would fare at the higher voltage.

Test Results

CAS 2 Results

At the ultra-tight timings of 2-2-2-5 that the Samsung TCCD is famous for, the OCZ modules did pretty well.

We managed to overclock the modules to 432MHz DDR at 2.8V. That's 8% faster than the rated clock speed of 400MHz.

Overvolting it though did not improve its performance. In fact, it seemed to reduce its stability and we only managed to hit 424MHz DDR at 3.0V.