Specification
General Details |
Dimensions |
||
Controller |
ACE 1201N Flash Disk Controller
|
Length |
36.4 mm
|
Flash Memory |
NAND-type Toshiba / Samsung / AMD
flash memory
|
Width |
42.8 mm
|
Buffer |
4 KB dual-ported SRAM
|
Height |
3.3 mm
|
Card Information Structure (CIS) |
256 bytes of attribute memory
|
Weight |
14.2 g
0.5 oz |
Type |
CF Type I
|
Reliability |
|
Capacity |
MTBF |
500,000 power-on hours
|
|
Unformatted |
64 MB
|
Error Rate |
<1 bit error in 1015 bits read
|
Formatted |
62.2 MB
|
ECC |
48-bit polynomial ECC supporting two random bits
per sector "on-the-fly" ECC corrections
|
Geometry |
Durability |
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Cylinder |
976 cylinders
|
Shock |
1000 G
|
Heads |
4 heads
|
Vibration |
15 G peak
0.5 sine wave 10-1500 Hz |
Sectors |
32 sectors
|
Electrical Properties |
|
Granularity |
Voltage |
3.3 V +/- 5%
5 V +/- 10% |
|
Sector Size |
512 bytes
|
Power Consumption |
|
Cluster Size |
2 KB
|
Read Mode |
30 mA
|
Performance |
Write Mode |
30 mA
|
|
Data Transfer Mode |
ATA PIO Mode 4
|
Sleep Mode |
100 μA
|
Data Transfer Rate |
Up to 4.1 MB/s
|
Environmental Conditions |
|
Flash To Buffer Transfer Rate |
Up to 12.5 MB/s
|
Operating Temperature |
0 to 60 oC
|
Buffer To Host Transfer Rate |
Up to 20 MB/s
|
Storage Temperature |
-20 to 70 oC
|
Sustained Read |
5.62 MB/s
|
Relative Humidity |
95% maximum
|
Sustained Write |
2.98 MB/s
|
Altitude |
15,240 m
50,000 ft |
Command To DREQ |
<500 μs
|
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Idle To Read |
<1 μs
|
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Idle To Write |
<1 μs
|