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SDRAM Precharge Control

Common Options : Enabled, Disabled

Quick Review

This BIOS feature is similar to SDRAM Page Closing Policy.

This BIOS feature determines if the chipset should try to leave the pages open (by closing just one open page) or try to keep them closed (by closing all open pages) whenever there is a page miss.

When enabled, the memory controller will only close one page whenever a page miss occurs. This allows the other open pages to be accessed at the cost of only one clock cycle.

However, when a page miss occurs, there is a chance that subsequent data requests will result in page misses as well. In long memory reads that cannot be satisfied by any of the open pages, this may cause up to four full latency reads to occur.

When disabled, the memory controller will send an All Banks Precharge Command to the SDRAM interface whenever there is a page miss. This causes all the open pages to close (precharge). Therefore, subsequent reads only need to activate the necessary memory bank. This is useful in cases where subsequent data requests will also result in page misses.

As you can see, both settings have their advantages and disadvantages. But you should see better performance with this feature enabled as the open pages allow very fast accesses. Disabling this feature, however, has the advantage of keeping the memory contents refreshed more often. This improves data integrity although it is only useful if you have chosen a SDRAM refresh interval that is longer than the standard 64 msec.

Therefore, it is recommended that you enable this feature for better memory performance. Disabling this feature can improve data integrity but if you are keeping the SDRAM refresh interval within specification, then it is of little use.


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